常用红外光敏电阻参数.docx
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常用红外光敏电阻参数.docx
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常用红外光敏电阻参数
相应曲线:
硫化铅:
硒化铅:
1.硫化铅光敏电阻系列:
电气参数
TestConditionsat25°C-Typical
A&AM
B&BM
C&CM
D*(Pk.,600,1)x1011
.5-1.2
.5-1.2
.5-1.2
WavelengthCut-off-Microns
3.0
3.0
2.7
PeakWavelengthResponse-Microns
2.5
2.5
2.2
TimeConstant-Microseconds
<100
100-300
>300
Resistance-Megohms
.2-2.0
.2-2.0
.5-10
注:
型号中的M为密封封装.
活性区参数
Code
Number
ActiveArea
BiasVoltage
Typical VW-1
Responsivity
Package
Size
Inches
mm
Typical
Maximum
.25
.010
.25
10
20
1.0x106
TO-5&TO-46
.5
.020
.5
20
40
6.0x105
TO-5&TO-46
1
.040
1
50
100
3.0x105
TO-5&TO-46
2
.080
2
100
200
1.5x105
TO-5
3
.120
3
150
300
1.0x105
TO-5
5
.200
5
250
500
6.0x104
TO-8
10
.400
10
500
1000
3.0x104
TO-3
机械参数
TO-46
TO-5
TO-8
TO-3
典型应用电路:
2.电子冷却硫化铅光敏电阻系列
电气参数
TestConditionsat25°C-Typical
D
D2
D21**
D*(Pk.,600,1)x1011
1.5
2.5
2.8
WavelengthCut-off-Microns
3.1
3.2
3.3
PeakWavelengthResponse-Microns
2.5
2.5
2.5
TimeConstant-Milliseconds
1-2.5
1-2.5
1-2.5
Resistance-Megohms
.5-10
.5-10
.5-5
OperatingTemperature-°C
-20
-30
-45
CoolerPower-VoltsDC/Amps
.8V/1.8A
.8V/1.4A
2.0V/1.4A
NOTE:
3-6StageThermoelectricCoolersandVacuumLNDewarsalsoavailable.Contactusforfurtherdetails.
**TO-8,TO-66orTO-3packagesonly.
活性区参数
Code
Number
ActiveArea
BiasVoltage
Typical VW-1X105
Responsivity
Package
Size
Inches
mm
Typical
Maximum
-20
-30
-45
1
.040
1
50
100
6.0
9.0
13.0
TO-5-37-8-66
2
.080
2
100
200
3.0
4.5
6.5
TO-5-37-8-66
3
.120
3
150
300
2.5
3.5
4.5
TO-5-37-8-66
5
.200
5
250
500
1.2
2.0
3.0
TO-8-66
10
.400
10
500
1000
.6
1.0
1.5
TO-3
机械参数
3.硫化铅线阵
主要性能:
Array
PbSArray1-3microns
PbSeArray1-5microns
PbSD*>8x1010Note
PbSeD*>3x109Note
Squareorrectangulargeometry
Pitchdownto59microns
Pixels256
Thermoelectricallycooled
TECoolerController
Operatingtemp.downto253K
Opticalfilters
Lowcost
Customdesigns
Multiplexing
DCintegrating
Darkcurrentsubtraction
Sampleratesfrom100Hzto1.2MHz
Independentorslaveoperation
Custominterfacesavailable
Integrationtimesfrom0.05msecto0.66sec.
SystemRequirements
±12to±15VDC
TECooler5V@2amps(typical)
AmplifierSpecifications
Outputvoltagerangeupto±12V
Outputcurrent2-3mAmptypical
andupto30mAmpavailable
Adjustableoutputgainavailable
4.硒化铅光敏电阻
电气参数
TestConditionsat25°C-Typical
F&FM
FA&FAM
FS&FSM
D*(Pk.,1000,1)x109
1.0-3.0
3.0-6.0
>6.0
WavelengthCut-off-Microns
4.5-5.0
4.5-5.0
4.5-5.0
PeakWavelengthResponse-Microns
3.8-4.3
3.8-4.3
3.8-4.3
TimeConstant-Microseconds
1-3
1-3
1-3
Resistance-Megohms
.1-4
.1-4
.1-4
活性区参数
Code
Number
ActiveArea
BiasVoltage
Typical VW-1
Package
Size
Inches
mm
Typical
Maximum
1
.040
1
50
100
6,000
TO-5&TO-46
2
.080
2
100
200
3,000
TO-5
3
.120
3
150
300
2,000
TO-5
5
.200
5
250
500
1,200
TO-8
10
.400
10
500
1000
600
TO-3
机械参数
TO-46
TO-5
TO-8
TO-3
5.电子冷却硒化铅光敏电阻
电气参数
TestConditionsat25°C
G
G2
G21**
GS21**
D*(Pk.,1000,1)x1010
.7
1.2
1.5
2.0
WavelengthCut-off-Microns
5.2
5.3
5.4
5.4
PeakWavelengthResponse-Microns
4.3
4.5
4.6
4.6
TimeConstant-MicroSeconds
10
15
20
20
Resistance-Megohms
.2-7
.2-10
.2-15
.2-15
OperatingTemperature-°C
-20
-30
-45
-45
CoolerPower
1.2V/1.8A
1.3V/1.6A
2.2V/1.2A
2.2V/1.2A
NOTE:
3-6StageThermoelectricCoolersandLN2Dewarsavailable.Pleasecontactusforfurtherdetails.
**TO-8,TO-66andTO-3packagesonly.
活性区参数
Code
Number
ActiveArea
BiasVoltage
Typical VW-1
Responsivity
Package
Size
Inches
mm
Typical
Maximum
-20
-30
-45
1
.040
1
50
100
9000
13000
16000
TO-5-37-8-66
2
.080
2
100
200
5000
8000
11000
TO-5-37-8-66
3
.120
3
150
300
3000
5000
6500
TO-5-37-8-66
5
.200
5
250
500
2000
3000
3500
TO-8-66
10
.400
10
500
1000
1000
1500
1800
TO-3
机械参数
6.硒化铅线阵
主要性能:
Array
PbSArray1-3microns
PbSeArray1-5microns
PbSD*>8x1010Note
PbSeD*>3x109Note
Squareorrectangulargeometry
Pitchdownto59microns
Pixels256
Thermoelectricallycooled
TECoolerController
Operatingtemp.downto253K
Opticalfilters
Lowcost
Customdesigns
Multiplexing
DCintegrating
Darkcurrentsubtraction
Sampleratesfrom100Hzto1.2MHz
Independentorslaveoperation
Custominterfacesavailable
Integrationtimesfrom0.05msecto0.66sec.
SystemRequirements
±12to±15VDC
TECooler5V@2amps(typical)
AmplifierSpecifications
Outputvoltagerangeupto±12V
Outputcurrent2-3mAmptypical
andupto30mAmpavailable
Adjustableoutputgainavailable
Note:
TheseD*valuesareforunmultiplexedarrays.D*isaffectedbysamplerates,integrationtimes,etc.
7.InGaAsPIN光电二极管探测器
InGaAsPINPhotodiodeDetectorsRT非致冷型
主要性能:
低暗电流,低电容,高响应.
Mesa结构,无信号时不导电.
适合于DC-3GHz,以及光纤应用.
Part#
Diametermm
Resp.A/W@1.3μm
Resp.A/W@1.55μm
DarkCurrentnA
CutoffFreq.MHz
Cap.pf
ShuntRes.MΩ
PeakD*cm*Hz½/W
NEPW/Hz½
I5-.04-46
.040
.85
.90
.075
3000
.6
9000
>1012
<10-14
I5-.08-46
.080
.85
.90
.10
2200
.9
7000
>1012
<10-14
I5-.1-46
.100
.85
.90
.15
2000
1
6000
>1012
<10-14
I5-.3-46
.300
.85
.90
.4
350
5
900
>1012
<10-14
I5-.5-46
.500
.85
.90
.7
200
10
250
>1012
<10-13
I5-1-46
1.00
.85
.90
2
30
100
90
>1012
<10-13
I5-2-5
2.00
.85
.90
8
3
600
20
>1012
<10-13
I5-3-5
3.00
.85
.90
20
1.75
1200
9
>1012
<10-13
I5-5-8
5.00
.85
.90
30
.5
4000
2
>1012
<10-12
I5-10-3
10.00
.85
.90
100
.15
14000
.5
>1012
<10-12
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