WCuW合金薄膜的矿床及其结构毕业论文外文文献翻译及原文.docx
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WCuW合金薄膜的矿床及其结构毕业论文外文文献翻译及原文.docx
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WCuW合金薄膜的矿床及其结构毕业论文外文文献翻译及原文
毕业设计(论文)
外文文献翻译
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溅射磁控管W-Cu-W合金薄膜的矿床及其结构
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2017.02.14
DepositionandstructureofW–Cu
multilayercoatingsbymagnetron
sputtering
CWang1,4,PBrault1,5,CZaepffel1,JThiault1,APineau2and
TSauvage3
1GroupedeRecherchessurl’Energ´etiquedesMilieuxIonis´es,UMR6606CNRS-Universit´e
d’Orl´eansBP6744,45067Orl´eansCedex2,France
2CentredeRecherchessurlaMati`ereDivis´ee,1BruedelaF´erollerie,F-45071Orl´eans
Cedex2,France
3Centred’EtudesetdeRecherchesparIrradiation,UPR33CNRS,3AAvenuedela
RechercheScientifique,45071Orl´eansCedex2,France
E-mail:
Pascal.Brault@univ-orleans.fr
Received22July2003
Published15October2003
Onlineatstacks.iop.org/JPhysD/36/2709
Abstract
W–Cu–WmultilayermetalliccoatingsaredesignedanddepositedbydcmagnetronsputteringonanFesubstrate.Correlationsbetweenthedepositionparameters,suchastargetpowerandArgaspressure,andthefilmcharacteristicsareinvestigated.Especially,depositionparametersforadenseW–Cumultilayercoatingarediscussed.Thecoatingsexhibitsmallgrainsizesandadensesurfacestructureforhightargetpowerandlowargonpressure,leadingtodenseandwelladhesivefilms.
1.Introduction
Tungsten,asahigh-atomicnumber(high-Z)andrefractorymaterial,hasattractedconsiderableinterestforitspotentialuseintheITERplasma-facingcomponentsandinmicroelectronictechnologyduetoitsexcellentthermalandelectricalproperties[1–3].Inaddition,tungsten-basedcoatingshavebeendevelopedforapplicationsinthefieldofwearorerosion-resistantcomponentsinhigh-temperature/highvacuumenvironments,forexampleW–C,W–Si,W–N,W–Re,W–La2O3[4–7].Ontheotherhand,duetotheveryhighthermalconductivityandfracturetoughness,Cuanditsalloyshavebeenwidelyusedasheatsinksinhigh-heatfluxplasmafacingcomponents.SoW–Cubecomesanattractivecandidatematerialforheatsinksinplasmaexperimentsaswellasarmour[4,8,9].Becausethereis(almost)nomutualsolidsolubility,onlyW–Cupseudo-alloys,asacompositematerial,areproduced.Fromaresearchpointofview,howtoobtainadensestructureandhowtoovercomethebigmismatchofthermalexpansionremainopenquestions.Finegrainsandcompositionally/functionallygradeddesignhavebeendiscussed[4,10,11]asanalternativeroute.However,W–Cucoatingshavemostlybeenfabricatedbymechanicalalloyingoftheirpowdermixtures[12,13].SofartherehavebeenfewstudiesreportedonaW–Cumultilayercoatingbyphysicalvapourdeposition(PVD).Itiswell-knownthat,inPVDtechnology,thephysicalpropertiesofsputteredtungstenorcopperfilmsdependstronglyonthedepositionparameters,especiallythosecontrollingthekineticenergyofdepositingspecies.Forexample,Hubleretal[14]claimedthatthekineticenergymustbecontrolledinthe(best)energyrangeof5–30eVperatom.From0.1to10eV,thefilmgrowthmechanismchangesfromanisland-growthmodetowardsalayer-by-layermode,andbelowabout5eV,theenergyisineffectiveforchangingthephysicalprocess.Aboveabout30eV,defectsareintroducedintothefilmbydisplacementdamage.Thedepositionfluxandtheenergyoftheatomsandionsonthesubstratedeterminethedepositionrateandthefilmcharacteristics,respectively[15,16].Furthermore,thefluxandenergyaremainlycontrolledbythedepositionvariables:
targetpower(involvingvoltageandcurrent),workingpressure(involvinggasspeciesandmassflow),substratetemperature,substratebiasvoltage,target-to-substratedistance(dT–S).Inthispaper,W–CumultilayerfilmshavebeendepositedontoanFesubstrateatroomtemperaturebydcmagnetronsputtering.Themostimportantdepositionparameters,targetpowerincludingtargetcurrentandvoltage,andArgaspressure,wereinvestigatedinordertoelucidatehowthedepositionparametersaffectthefilmcharacteristics(density,structure)andthephysicalproperties(adhesion).Goodadhesionanddensestructurearepreliminaryrequirementsforthermalstabilityandgoodbehaviourunderplasmaconditions
2.Experiments
Amagnetronsputteringdepositionsystem(APRIMVIDE),withthreeindependentlybiaseddcplanarmagnetrontargets,isusedtosputterWandCu(onetargetisidle).Theresultingplasmasarewellconfinedabovethetargets.ThetargetdiscsofpureW(99.99%)andpureCu(99.99%)haveadiameterof10cmandathicknessof0.6cm,respectively.Thethreetargetsurfacesare30°tiltedfromthesubstratesurfacedirection,andthetargetsurfacecentreismadetofacethehalfradiusofthesubstrate,asshowninfigure1.Thedistancefromthetargetcentretothesubstratehalfradiusis9.0cm.Thesubstrateshave10cm×10cmsurfaceareaandarevacuumtransferredonarotatingholder.Thebasevacuuminthedepositionchamberisbetterthan1×10−7Pausingaturbomolecularpump(ATP900,ALCATEL).Acoldcathode/piranigauge(ACC1009,ALCATEL)isusedtomeasurethevacuumintherangeof10−7–105Pa.Theworkinggasisargonanditisintroducedintothevacuumchamberatafixedflowrateof30standardcubiccentimetresperminute(sccm).ThesubstratesarepureFe(200μmthick)andgreaseisultrasonicallyremovedusingacetonebeforemountingonthesubstrateholder.Priortoanydeposition,thetargetsurfaceissputter-cleanedfor3–5minwhilethesubstrateisprotectedbyamovableshield.Thedepositioniscarriedoutatroomtemperaturewithoutextraheatingorcoolingofthesubstrate.Thus,theeffectivesubstratetemperaturedependsonthedepositionconditions.Thetargetpowerischangedfrom100to650Wusingpowersuppliesofconstantpowertype.TheArgaspressureisvariedfrom0.2to2.5Pabycontrollingthepumpingspeed(throttling)andkeepingthegasflowrateconstant.ThedepositiontimeischosenaccordingtothedesiredcoatingthicknessofW(400nm)andCu(200nm).Thecross-section,filmthickness,andsurfacemorphologyincludingthegrainsizearemeasuredbyscanningelectronmicroscopy(SEM)(Hitachi:
S-4200).Thedepositionratesareestimatedfromthemeanthicknessmeasurementstakenfromcross-sectionalSEMmicrographs
Figure1.Schematicdrawingofthegeometricalpositionofthetargetandthesubstrate.
withknowndepositiontime.Thecrystallinestructureismeasuredbyx-raydiffraction(XRD).ThesurfacearealdensityandthelayerdepthprofilearedeterminedbyRutherfordbackscatteringspectroscopy(RBS)usinga2.0MeV4He+ionbeamofaVandeGraaffaccelerator.
3.Resultsanddiscussion
ThesampleswiththelayeredstructureW(400nm)–Cu(200nm)–W(400nm)weredepositedonFesubstrateswithvariabletargetpowersandworkingpressures.Inordertoinvestigatetheeffectsofthetargetpoweronthefilmcharacteristics,thepowerwaschangedfrom200to650Wfortungstenandfrom100to300Wforcopperwhilekeepingtheworkingpressureconstantat1.0Pa.Figure2displaystheevolutionofthetargetbiasvoltage,V,andcurrent,I,asafunctionoftheinputpower.Withthesamepower,theelectriccurrentsattheWtargetarealwayslargerthantheCutarget,andconversely,WtargetbiasvoltagesaresmallerthanCutargetbiasvoltages.Figure3indicatesthatthedepositionratesofbothWandCuincreaselinearlywithincreasingtargetpowerforaconstantgaspressureof1.0Pa.Fortargetpowersfixedat500Wfortungstenand250Wforcopper,theArpressureischangedfrom0.2to2.5Pa.Thus,figure4displaysthevolutionofthetargetbiasvoltage,V,andcurrent,IagainstArpressure.ThedifferenceindepositionratesbetweenWandCuincreasesveryfastwithincreasingpressureabove1Pa,asshowninfigure5.AmaximumdepositionrateforWandCuisreachedwhenincreasingworkingpressureatfixedtargetpowers.Fromfigure5,themaximumdepositionrateofWis1.3nms−1,withatargetpowerof500W,whentheArgaspressureis2.0Pa.ThemaximumdepositionrateofCuis1.0nms−1,withatargetpowerof250W,whentheArgaspressureis1.0Pa.Beyondthismaximum,deposition
Figure2.VariationofthetargetvoltageandcurrentwithtargetpowerforWandCusputtering(Arpressure:
1.0Pa)
Figure3.VariationofthedepositionrateofWandCuwithtargetpower(Arpressure:
1.0Pa)
Figure4.VariationofthetargetvoltageandcurrentforWandCusputteringwiththeArgaspressureatafixedtargetpower(tungsten:
500W;copper:
250W).
rateswilldecrease.Thisbehaviourresultsfromthemonotonicdecreasingtargetbiasvoltagewhiletargetcurrentcontinuouslyincreasesaspressureincreases(figure4).Thismeansthatwhilemorepositiveionsimpingeonthetarget,lessmetallicatomsandionsreachthesubstrateduetothelowerbiasvoltageleadingtolessefficientsputtering.Moreover,theexcessArgaspressureinducesashortermeanfreepathofAr+ionswithmorefrequentcollisions,whichinducesalowerkineticenergywhentheyimpingeonthetarget.Asaresult,itcontributestolesssputteredatoms.Atahighworkingpressure,thesputteredmetallicatomsalsohavemorecollisionsandcanbescatteredoff,whichalsoaccountsforaloweringofthedepositionrate.
Figure6showsacross-sectionalviewoftheW–Cu–Wcoatinggrownatapowerof500W(fortungsten)and250W
Figure5.CorrelationofthedepositionratesofWandCuwithArgaspressureatafixedtargetpower(tungsten:
500W;copper:
250W)
.
Figure6.TheSEMphotographofacross-sectionstructureofaW–Cu–Wmultilayercoating(targetpower:
W,500W;Cu,250W;pressure:
1.0Pa).
Figure7.ComparisonofSEMphotographsofWsurfacemor
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